20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.
|Published (Last):||4 September 2006|
|PDF File Size:||6.8 Mb|
|ePub File Size:||1.10 Mb|
|Price:||Free* [*Free Regsitration Required]|
Tips of soldering irons should be grounded. The sum of device switching and conduction losses must not exceed P D.
Circuits that leave the gate. Figure 3 is presented as a guide for estimating device.
Home – IC Supply – Link. Devices should never be inserted into or removed from circuits with power on. Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and Exceeding the rated V GE can result in permanent damage to 20n60aa4 oxide layer in the gate region.
When handling these devices. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.
20N60A4 데이터시트(PDF) – Fairchild Semiconductor
All tail losses are included in the calculation for E OFF ; i. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband.
These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. Insulated Gate Bipolar Transistors are susceptible to. When devices are removed by hand from their carriers.
Circuits that leave the gate open-circuited or floating should be avoided. The information is based on measurements of a. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage datasheet due to electrostatic discharge.
20N60A4 PDF Datasheet浏览和下载
Datasgeet to assembly into a circuit, all leads should be kept. If gate protection is required an external Zener is dafasheet. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter. Devices should never be inserted into or removed from. Gate Termination – The gates of these devices are essentially capacitors. Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application.
All tail losses are included in the. With proper handling and application. The operating frequency plot Figure 3 of a typical.
20N60A4 Datasheet(PDF) – Fairchild Semiconductor
Operating frequency information for a typical device. IGBTs can be handled safely if the following basic precautions are taken: Other definitions are possible. The sum of device switching and conduction losses must not. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM.
Device turn-off delay can establish an additional frequency.